Dr. Preisler was appointed Vice President and Co General Manager of RF Business Unit in 2023 following his previous role as Director of Technology Development, RF & HPA. Dr. Preisler has been involved with SiGe BiCMOS development since joining Tower Semiconductor in 2004 and has held the title of Director of Technology Development since 2012. He has served on the committees of the IEEE RFIC and BCTM conferences and as a member of the ITRS wireless roadmap bipolar device committee.

Dr. Preisler received a B.Sc. in Electrical Engineering from U.C. San Diego and a Ph.D. in Applied Physics from Caltech in 2003 with a thesis that focused on antimonide semiconductors for optoelectronics. After graduating he served as a post-doctoral researcher at the IBM T.J. Watson research lab working on crystalline oxides and high-K gate dielectrics.

He has authored or co-authored 32 papers in the field of compound and column IV alloy semiconductor processing and device development, and two book chapters on bipolar device physics and processing.