Tower Semiconductor History
Shares began to be traded on NASDAQ (TSEM).
The worldwide Design Center was established in Netanya, Israel
state-of-the-art facility (Fab 2) in Migdal Haemek Israel,
designed to operate in geometries of 0.18-micron and below,
using advanced CMOS technology.
The merger provided several key benefits: increased global capacity,
a larger customer base, a more comprehensive product portfolio,
and a stronger financial base.
The joint venture added available capacity of approximately 800,000 wafers per year (8" equivalent) in three manufacturing facilities in Japan; one 300mm and two 200mm.
Tower Semiconductor was founded in 1993, with the acquisition of National Semiconductor’s 150mm wafer fabrication facility in Migdal Haemek, Israel. Tower became a public company in 1994. In 2001, Fab 2, a 200mm facility, was constructed alongside Fab 1.
In 2008, Tower acquired Jazz Semiconductor’s 200mm facility (Fab 3) which increased global capacity, offered a more comprehensive technology portfolio, a larger customer base, and a stronger financial base.
In 2014, TowerJazz completed a joint venture with Panasonic Corporation enabling TowerJazz to offer its customers state of the art 300mm technology including best of class 65nm CMOS image sensor dark current and quantum efficiency performance and additional 45nm digital technology, adding available capacity of approximately 800,000 wafers per year (8 inch equivalent) in three manufacturing facilities in Japan.
In 2016, in order to support the company’s strong customer demand and to enable additional manufacturing flexibility, TowerJazz acquired Maxim Integrated’s 8-inch wafer fabrication facility in San Antonio, Texas, United States, cost-effectively increasing production by approximately 28,000 wafers per month.