Dr. Assaf Lahav
CIS Research & Development Expert and Tower Semiconductor Fellow
Dr. Lahav joined Tower Semiconductor in 2001 and became a Tower Semiconductor Fellow in 2018. He has worldwide responsibility over the Company’s CMOS image sensor (CIS) technology offering. His research is focused on low noise global shutter technology, high resolution NIR imaging and back side illumination devices. Since 2008, Dr. Lahav has worked on global shutter pixel technology and fast sensors. This work in now widely used in many cameras including Time of Flight (TOF) and structured light 3D, range cameras for automotive applications, industrial and traffic control inspection cameras. From 2005 to 2008 he developed different device and process schemes for improving pixel dynamic range, noise, and sensitivity; this work enabled the transition from CCD technology to CIS in fields like cinema digital photography and broadcasting. Since 2002, Dr. Lahav has been the technology leader in the CIS R&D group and was responsible for the image sensor 0.18 technology ramp in Tower Semiconductor’s 200mm fab in Israel. He has authored or co-authored more than 35 technical papers in international journals and conferences and has 11 issued patents. Dr. Lahav received his Ph.D. degree in Electrical Engineering at the Technion, Israel Institute of Technology.