RF SOI & RF CMOS

Industry-leading advanced RF and HPA technologies for AI, cloud computing, and satellite-based internet service

200mm and 300mm wafer manufacturing
Low Ron x Coff, high performance, high linearity devices
Feature-rich platforms for high performance RF front-end module (FEM) products
In production at 6 fabs on 3 continents.
Available: RF-SOI technology with < 60fs Ron X Coff, 450GHz Ft of LNA device and ultra-dense digital library.

Sub-60fs Ron X Coff 2.5V NMOS.
Low RF noise devices for RF switch plus LNA integration.
High density (4fF/μm2) and high voltage (>25V) MIM capacitors. High-linearity metal fringe capacitors.
Low value and high value resistors, RF varactor, high-Q inductors.
High impedance, highly linear SOI substrate.
BSIM4 SOI, HiSIM SOI and PSP models.
Al or Cu low RC metallization.
Support for 1.2, 2.5, 3.3, or 5V.
High utilization standard cell library.
Optional high power handling device.
Highly accurate RF device models and fast parasitic extraction.