SiGe BiCMOS Terabit Platform
High performance SiGe BiCMOS technologies with Ft/Fmax of 300GHz and beyond
- Available: SBC18H5 technology for 400 Gb/s optical networks, SBC18H6 now sampling.
- Additional Markets: Communication; radar; satcom; EW; high speed analog.
- Devices: amps (PA, LNA, TIA); phased arrays; mm-Wave switching.
PLATFORM FEATURES:
- SiGe HBT transistors with Ft / Fmax of 325 / 450GHz and beyond.
- Ultra-low noise and high linearity transistors.
- 0.35μm, 0.18μm, 0.13μm and 65nm CMOS nodes.
- Single and dual gate CMOS to provide high levels of mixed-signal and logic integration.
- Complementary BiCMOS with high-speed vertical PNP transistors.
- High-density MIM Caps (up to 5.6fF/μm2).
- Varactors, poly and metal resistors, High-Q induc tors, deep trench and triple-well isolation.
- Up to 7 levels of metal with Al and Cu metallization.
- Wireless front-end-module on a chip elements.
- Comprehensive standard cell libraries.
- I/O libraries.
- Memory generators.
- Synopsys and Cadence ASIC flows.
- Stand-alone Cadence, Synopsys PDKs with support for ADS interoperability.
- Foundry certified EM stack-ups for EMX and ADS Momentum Silicon verified reference flows for sub-6 GHz wireless and 28 GHz mmWave.
- Inductor and transmission line toolboxes enabling rapid synthesis.
- Optional high-resistivity and SOI substrates.