Process Technology and PDK Enhancements for Wireless Applications
November 18, 2020 |
This session will review current 5G market adoption update and the technology enhancements Tower has implemented on its RFSOI and SiGe platforms to further improve end product designs performance and time to market. In particular, the session will cover our latest 300mm RFSOI offering showcasing its highly improved LNA performance vs. previous generations. We will review our enhanced RFSOI PDKs designed to allow better prediction of high-power antenna tuner products that account for flip chip assembly, providing customers the option to leverage this capability in order to reduce design development cycles. We will showcase very good mmWave LNA performance published from academia using our SBC18H5 platform. In addition, we will provide an overview of new Phase Change Material (PCM) devices demonstrated at Tower showing record-breaking RF and reliability performance, leading to enhanced performance of circuit architectures such as passive phase shifters and reconfigurable matching networks.
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Dr. Paul Hurwitz
Director of Device Technology, RF & HPA
Dr. Hurwitz was appointed Director of Device Technology at the Tower Semiconductor facility in Newport Beach, CA in 2013. Currently his team develops RF SOI technology that is used primarily for wireless front end module products. Previously he has worked on device and process integration for SiGe technologies at Jazz Semiconductor, specializing in integration with CMOS and complementary BiCMOS processes. He started his career in etch process development at Cypress Semiconductor in Austin, Texas. Dr. Hurwitz is on the Technical Program Committee of the Silicon Monolithic ICs in RF Systems (SiRF) technology conference. Several patents and recent publications are the result of his team’s work in RF SOI at Tower Semiconductor.
Dr. Hurwitz received his Ph.D. and B.S. in Physics from the University of Texas at Austin.