Display Solutions
See new worlds beyond your imagination
Beyond image sensors, Tower Semiconductor offers a unique range of technologies and solutions for LCOS, LED, Micro-LED and Micro-OLED Displays and projectors. Our CMOS platform, tailor-made for displays, offers state-of-the-art back-end processes to enable a reliable displays-on-CMOS mass production.
OLEDoS CMOS platform
Tower Semiconductor’s decades of expertise in large-scale, high-yield image sensor technology contributes also to micro-displays with the development of dedicated flows for high-brightness, low-leakage micro OLED displays. Our CMOS 65nm high-voltage technology is incredibly valuable in high-end AR/VR and XR markets, in particular for large displays (>1.4’’) 2-chips solutions.
Our dedicated MicroDisplay CMOS blackplane enable current driven pixel design down to 5 um pixel pitch, leading to 5,000 PPI pixel density for the most demanding AR/VR applications.
Both our 180nm and 65nm platforms are available in lean or full flow, enabling ultra compact AR design and high yield large format VR applications.
Platforms | 65nm OLEDoS | 180nm OLEDoS |
|---|---|---|
Wafer size | 300mm | 200mm |
Maximum pixel voltage | 5V-8V | 6V |
Stitching compatibility | Yes | Yes |
Dedicated low leakage High Voltage transistors | Yes | Not required |
Dedicated Low leakage transistors | Yes | Not required |
Flexible metal for fanout | Possible | Possible |
Contact on gate | Possible | Possible |
Flows | Full/lean | Full/lean |
In addition, Tower Semiconductor OLEDoS CMOS platform offer dedicated back end for OLED electrodes, both in 180nm and 65nm.
PLATFORM FEATURES:
- Proven CMOS process for Liquid Crystal On Silicon (LCOS) with high reflectivity mirrors
- Specific CMOS process back-end for ultra dense µOLED displays.
- Low leakage transistors and dense capacitor to support analog LCOS pixels
- 1.8V/5.0V and 1.8V/12.5V platforms available
- Stitching technology for large µOLED displays for VR HMDs
VR
LCOS
