SiGe BiCMOS Terabit Platform
High performance SiGe BiCMOS technologies with ultra-high Ft/Fmax
High performance SiGe BiCMOS technologies with Ft/Fmax of 300GHz and beyond
Tower Semiconductor offers high performance SiGe BiCMOS technologies optimized for tomorrow’s high-frequency wireless communications and high-speed networking applications. This industry-leading manufacturing platform includes transistors with speeds exceeding Ft/Fmax of 340/450GHz for use in ultra-high speed data communications or high-frequency wireless applications such as 24GHz and 77GHz automotive radar and 5G mm-wave. The platform offers low-noise transistors for use in smartphone and GPS wireless receivers and high-power transistors for use in mobile and IoT wireless transmitters.
Tower Semiconductor’s most popular SiGe BiCMOS volume production process today is SBC18H5 which is tailored for data rates up 1.6Tb/s and beyond and for copper-based and optical-fiber based transceiver components such as Trans-impedance amplifiers (TIAs), laser drivers (LDs), limiting amplifiers (LAs) and clock data recovery (CDRs).
This platform is also perfectly suited for mm-wave phased array applications due to its low noise performance for receivers (< 1.3dB at 40GHz), high dynamic range for transmitters, and low-cost relative to comparably performing CMOS nodes. Company’s SBC18H5 technology is now being adopted for next generation 1.6 Tb/s data networks, with 3.2 Tb/s node around the corner.
PLATFORM FEATURES:
- Ultra low noise and high linearity transistors
- 180, 130, and 65nm CMOS nodes
- Single and dual gate CMOS to provide high levels of mixed signal and logic integration
- SiGe HBT transistors with Ft / Fmax of 340/450 GHz and beyond
- Complementary BiCMOS with high-speed vertical PNP transistors (Ft up to 23GHz available) and BVceo up to 16V
- High-density MIM Caps (up to 5.6fF/µm2) and beyond
- Varactors, poly and metal resistors, High-Q inductors, deep trench and triple-well isolation
- Multiple levels of metal with Al and Cu metallization
- Comprehensive standard cell libraries
- I/O libraries
- Memory generators
- Synopsys and Cadence ASIC flows
- Stand-alone Cadence, Synopsys PDKs with support for ADS interoperability
- Inductor and transmission line toolboxes enabling rapid synthesis
- Foundry certified EM stack-ups for EMX and ADS Momentum Silicon verified reference flows for sub-6 GHz wireless and 28 GHz mmWave
- Enabling wireless front-end-module on a chip
SiGe BiCMOS Markets Served
