Under OLED and Under LCD Optical Fingerprint Sensors 

November 17, 2020  

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Japan session in Japanese by Isao Miyanaga


Fingerprint identification for cellphones has long become a standard in today’s market. The requirement of having the sensor under the cellphone screen has led to the development of optical fingerprint sensors which provide higher performance and cost advantages as compared with other available alternatives (e.g. ultrasonic sensors). Due to the size and constraints of fingerprint sensors, 0.18um CIS technology platform provides an ideal solution.   The implementation of these sensors is classified into lens-type sensors, that have a system lens like traditional cameras, and 1:1 sensors, where the sensor works in proximity to the finger and uses a collimator instead of a lens. The lens-type sensors are widely used for under OLED and under LCD cellphone screens. If used under LCD, these sensors work in the NIR wavelength with a dedicated NIR light source. The 1:1 sensors are used for ultrathin smartphones using OLED screens, (usually the higher end cellular phones). 

Tower offers specialized solutions for both sensor types. Low noise and pixels with internal memory nodes for the lens-type sensors, and cost-effective high-performing pixel to the large 1:1 sensors. For the latter, a collimator optics–based on large elevated micro-lenses was developed, compatible with a thin film IR-cut filter. 

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Dr. Amos Fenigstein

Senior Director of CIS Research & Development, Sensors Business Unit

Dr. Amos Fenigstein is a senior director of R&D for image sensors in Tower Semiconductor since 2005. During these years Amos’s team developed a wide range of CIS pixel technologies, ranging from high end cameras and industrial fast global shutter sensors, to large X-ray sensor and SPAD devices. Amos has been with Tower since 2001 starting as device engineering manager. Before joining Tower, Amos managed a failure analysis team in Intel for its flip chip technology in the years 1998 – 2001.  Prior to Intel, Amos worked for SCD on state-of-the-art MCT far infrared image sensors till 1998. Amos received his B.Sc., M.Sc. and D.Sc. from the Electrical Engineering Department of the Technion, Israeli Institute of Technology (D.Sc. in 1995 on Quantum Well IR sensors), where he lectures on CMOS and CIS technology to these days.

Dr. Amos Fenigstein


For more information, please contact:

Limor Silberberg:  limorsi@towersemi.com

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